COILED CRYSTALS OF GALLIUM-ARSENIDE

被引:8
作者
ADDAMIANO, A
机构
关键词
D O I
10.1016/0022-0248(71)90109-6
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:351 / +
页数:1
相关论文
共 50 条
  • [41] GALLIUM ALUMINUM ARSENIDE GALLIUM-ARSENIDE INTEGRATED OPTICAL REPEATER
    BARCHAIM, N
    LAU, KY
    URY, I
    YARIV, A
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1984, 466 : 65 - 68
  • [42] RELIABILITY OF GALLIUM-ARSENIDE DEVICES
    MAURER, RH
    CHAO, KD
    BARGERON, CB
    BENSON, RC
    NHAN, E
    JOHNS HOPKINS APL TECHNICAL DIGEST, 1992, 13 (03): : 407 - 417
  • [43] DISLOCATION STATES IN GALLIUM-ARSENIDE
    JONES, R
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 39 (01): : 21 - 25
  • [44] DIFFUSION OF CHROMIUM IN GALLIUM-ARSENIDE
    DEAL, MD
    STEVENSON, DA
    JOURNAL OF APPLIED PHYSICS, 1986, 59 (07) : 2398 - 2407
  • [45] EPITAXIAL GALLIUM-ARSENIDE GROWTH
    不详
    ELECTRONIC ENGINEERING, 1979, 51 (627): : 10 - 10
  • [46] HALL FACTOR OF GALLIUM-ARSENIDE
    BORISOVA, LA
    KRAVCHENKO, AF
    KOT, KN
    SKOK, EM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (05): : 693 - +
  • [47] PHOSPHORUS DIFFUSION IN GALLIUM-ARSENIDE
    JAIN, GC
    SADANA, DK
    DAS, BK
    SOLID-STATE ELECTRONICS, 1976, 19 (08) : 731 - 736
  • [48] MEV IMPLANTATION OF GALLIUM-ARSENIDE
    KANBER, H
    CHEN, JC
    BARGER, MJ
    ION BEAM PROCESSING OF ADVANCED ELECTRONIC MATERIALS, 1989, 147 : 185 - 190
  • [49] IMPURITY THERMOREFLECTION OF GALLIUM-ARSENIDE
    REZNICHENKO, MF
    SALMAN, EG
    VERTOPRAKHOV, VN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (06): : 741 - 743
  • [50] GALLIUM-ARSENIDE ON SILICON - A REVIEW
    MORKOC, H
    UNLU, H
    ZABEL, H
    OTSUKA, N
    SOLID STATE TECHNOLOGY, 1988, 31 (03) : 71 - 76