ALUMINUM SPIKING AT CONTACT WINDOWS IN AL/TI-W/SI

被引：11

作者：

CHANG, PH

HAWKINS, R

BONIFIELD, TD

MELTON, LA

机构：

[1] TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265

[2] UNIV TEXAS DALLAS,DEPT CHEM,RICHARDSON,TX 75083

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 04期

关键词：

D O I：

10.1063/1.99491

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：272 / 274

页数：3

共 8 条

[1] THIN-FILM INTERACTIONS IN SI/SIO2/W-TI/AL-1-PERCENT SI SYSTEM [J].

CHANG, PH ;

LIU, HY ;

KEENAN, JA ;

ANTHONY, JM ;

BOHLMAN, JG .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) :2485-2491

[2]

Fraser D. B., 1983, VLSI technology, P347

[3] INTERCONNECTIONS IN VLSI [J].

GHATE, PB .

PHYSICS TODAY, 1986, 39 (10) :58-66

[4]

GHATE PD, 1982, MATER RES SOC S P, V10, P371

[5] PRECIPITATION OF SI FROM AL METALLIZATION OF INTEGRATED-CIRCUITS [J].

MCCALDIN, JO ;

SANKUR, H .

APPLIED PHYSICS LETTERS, 1972, 20 (04) :171-&

[6]

Rosenberg R., 1978, Thin films. Interdiffusion and reactions, P13

[7] SOLID-PHASE EPITAXIAL-GROWTH OF SI MESAS FROM AL METALLIZATION [J].

SANKUR, H ;

MCCALDIN, JO ;

DEVANEY, J .

APPLIED PHYSICS LETTERS, 1973, 22 (02) :64-66

[8]

TU KN, 1978, THIN FILMS INTERDIFF, P396

← 1 →