EFFECTS OF DEPOSITION PARAMETERS AND OXYGEN ADDITION ON PROPERTIES OF SPUTTERED INDIUM TIN OXIDE FILMS

被引：0

作者：

Munir, Badrul ^{[1
]}

Wibowo, Rachmat Adhi ^{[2
]}

Ho, Kim Kyoo ^{[2
]}

机构：

[1] Univ Indonesia, Dept Met & Mat Engn, Depok 16424, Indonesia

[2] Yeungnam Univ, Sch Mat Sci & Engn, Gyongsan 712749, South Korea

来源：

MAKARA JOURNAL OF TECHNOLOGY | 2012年 / 16卷 / 02期

关键词：

characterization; indium semiconductor; sputtering; thin films; tin oxide;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium tin oxide (ITO) films were sputtered on corning glass substrate. Oxygen admixture and sputtering deposition parameters were optimized to obtain the highest transparency as well as lowest resistivity. Structural, electrical and optical properties of the films were then examined. Increasing deposition rate and film thickness changed the crystallographic orientation from (222) to (400) and (440), as well as higher surface roughness. It was necessary to apply substrate heating during reposition to get films with better crystallinity The lowest resistivity of 5.36 x 10(-4) Omega.cm was obtained at 750 nm film thickness. The films' resistivity was increased by addition of oxygen up to 2% in the argon sputtering gas. All films showed over 85% transmittance in the visible wavelength range, possible for applications in photovoltaic and display devices.

引用

页码：103 / 108

页数：6

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