ANALYSIS OF AMORPHOUS-SILICON THIN-FILM TRANSISTORS

[1] DOUBLE-INJECTION FIELD-EFFECT TRANSISTOR - A NEW TYPE OF SOLID-STATE DEVICE [J]. APPLIED PHYSICS LETTERS, 1986, 48 (20) : 1386 - 1388

[2] A COMPARISON OF SINGLE-CARRIER AND DOUBLE-CARRIER INJECTION IN AMORPHOUS-SILICON ALLOYS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (04) : 1554 - 1561

[3] HACK M, 1987, IN PRESS APR MRS M

[4] HACK M, 1986, MAT RES SOC S P, V70, P643

[5] Lampert M.A., 1970, CURRENT INJECTION SO

[6] AMORPHOUS-SILICON FIELD-EFFECT DEVICE AND POSSIBLE APPLICATION [J]. ELECTRONICS LETTERS, 1979, 15 (06) : 179 - 181

[7] TUAN HC, 1986, MATER RES SOC S P, V70, P651

[8] AMPLIFICATION OF BIPOLAR CURRENT FLOW BY CHARGE INDUCED FROM AN INSULATED GATE ELECTRODE [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) : 1108 - 1111

[1] DOUBLE-INJECTION FIELD-EFFECT TRANSISTOR - A NEW TYPE OF SOLID-STATE DEVICE [J]. APPLIED PHYSICS LETTERS, 1986, 48 (20) : 1386 - 1388

[2] A COMPARISON OF SINGLE-CARRIER AND DOUBLE-CARRIER INJECTION IN AMORPHOUS-SILICON ALLOYS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (04) : 1554 - 1561

[3] HACK M, 1987, IN PRESS APR MRS M

[4] HACK M, 1986, MAT RES SOC S P, V70, P643

[5] Lampert M.A., 1970, CURRENT INJECTION SO

[6] AMORPHOUS-SILICON FIELD-EFFECT DEVICE AND POSSIBLE APPLICATION [J]. ELECTRONICS LETTERS, 1979, 15 (06) : 179 - 181

[7] TUAN HC, 1986, MATER RES SOC S P, V70, P651

[8] AMPLIFICATION OF BIPOLAR CURRENT FLOW BY CHARGE INDUCED FROM AN INSULATED GATE ELECTRODE [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) : 1108 - 1111