HIGH-POWER AGING TESTS OF 1.3-MU-M AND 1.5-MU-M VIPS LASERS

被引：7
作者：
OSHIBA, S
KAWAI, Y
机构：
来源：
ELECTRONICS LETTERS | 1987年 / 23卷 / 16期
关键词：
D O I：
10.1049/el:19870596
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：843 / 844
页数：2
相关论文
共 6 条
[1]   SIMULTANEOUS AMPLIFICATION OF WAVELENGTH-DIVISION-MULTIPLEXED SIGNALS BY A HIGHLY EFFICIENT FIBER RAMAN AMPLIFIER PUMPED BY HIGH-POWER SEMICONDUCTOR-LASERS [J].
EDAGAWA, N ;
MOCHIZUKI, K ;
IWAMOTO, Y .
ELECTRONICS LETTERS, 1987, 23 (05) :196-197
[2]   V-GROOVED INNER-STRIPE LASER-DIODES ON A P-TYPE SUBSTRATE OPERATING OVER 100 MW AT 1.5 MU-M WAVELENGTH [J].
HORIKAWA, H ;
OSHIBA, S ;
MATOBA, A ;
KAWAI, Y .
APPLIED PHYSICS LETTERS, 1987, 50 (07) :374-376
[3]  
MATOBA A, 1985, P IOOC ECOC VEN IT, V1, P211
[4]   RELIABILITY OF 1.3 MU-M V-GROOVED INNER-STRIPE LASER-DIODES UNDER HIGH-POWER OPERATION [J].
OSHIBA, S ;
MATOBA, A ;
HORIKAWA, H ;
KAWAI, Y ;
SAKUTA, M .
ELECTRONICS LETTERS, 1986, 22 (08) :428-429
[5]  
OSHIBA S, 1987, IEEE J QUANTUM ELECT, V23
[6]  
OSHIBA S, 1986, 10TH IEEE INT SEM LA, P148
1