2-DIMENSIONAL SEMICONDUCTOR ANALYSIS USING FINITE-ELEMENT METHOD

被引：33
作者：
ADACHI, T
YOSHII, A
SUDO, T
机构：
[1] Electrical Communication Laboratories, Nippon Telegraph and Telephone Public Corporation, Musashino-shi, Tokyo
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 07期
关键词：
D O I：
10.1109/T-ED.1979.19540
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Two-dimensional simulation of semiconductor devices using a finite-element formulation is described. In the present analysis, Poisson's equation is solved by a finite-element method, based on the variational principle, and current continuity equations are solved by a method of weighted residuals. The advantage of this method is mentioned. In order to demonstrate the validity of this method, a bipolar n-p-n transistor is analyzed, considering the generation-recombination term. Not only voltage-current characteristic, but also junction capacitance and cutoff frequency are calculated. Then transistor behavior under inverse mode by using the n-type buried layer as a common emitter is discussed. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.
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页码：1026 / 1031
页数：6
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