COMPARISON OF SIMPLE AND NUMERICAL 2-DIMENSIONAL MODELS FOR THRESHOLD VOLTAGE OF SHORT CHANNEL MOSTS

被引：15
作者：
COE, DJ [1 ]
BROCKMAN, HE [1 ]
NICHOLAS, KH [1 ]
机构：
[1] MULLARD RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
来源：
SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 12期
关键词：
D O I：
10.1016/0038-1101(77)90209-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：993 / 998
页数：6
相关论文
共 11 条
  • [1] 2-DIMENSIONAL SOLUTION OF DC CHARACTERISTICS FOR MOST
    ARMSTRONG, GA
    MAGOWAN, JA
    RYAN, WD
    [J]. ELECTRONICS LETTERS, 1969, 5 (17) : 406 - +
  • [2] OPTIMUM ACCELERATING FACTOR FOR SOR SOLUTIONS OF DOMAINS CONTAINING DELTAPHI/DELTAN=0 BOUNDARY CONTITIONS
    ARMSTRONG, GA
    MAGOWAN, JA
    RYAN, WD
    [J]. ELECTRONICS LETTERS, 1969, 5 (04) : 69 - +
  • [3] IMPROVED YIELDS FOR MOSTS USING ION-IMPLANTATION
    BROCKMAN, HE
    [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1716 - 1718
  • [4] THRESHOLD VOLTAGE FROM NUMERICAL SOLUTION OF 2-DIMENSIONAL MOS-TRANSISTOR
    DELAMONEDA, FH
    [J]. IEEE TRANSACTIONS ON CIRCUIT THEORY, 1973, CT20 (06): : 666 - 673
  • [5] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS
    DENNARD, RH
    GAENSSLEN, FH
    YU, HN
    RIDEOUT, VL
    BASSOUS, E
    LEBLANC, AR
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268
  • [6] ANALYSIS OF THRESHOLD VOLTAGE FOR SHORT-CHANNEL IGFETS
    LEE, HS
    [J]. SOLID-STATE ELECTRONICS, 1973, 16 (12) : 1407 - 1417
  • [7] LATERAL SPREAD OF ION-IMPLANTED IMPURITIES IN SILICON
    PAN, E
    FANG, FF
    [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) : 2801 - 2803
  • [8] A UNIPOLAR FIELD-EFFECT TRANSISTOR
    SHOCKLEY, W
    [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1365 - 1376
  • [9] Smith G. D., 1965, NUMERICAL SOLUTION P
  • [10] SZE SM, 1969, PHYSICS SEMICONDUCTO
12