ORIGIN OF N-CONGRUENT-+0-2 INJECTION CURRENT IN ALXGA1-XAS HETEROJUNCTIONS

被引：28

作者：

HENRY, CH ^{[1
]}

LOGAN, RA ^{[1
]}

MERRITT, FR ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1977年 / 31卷 / 07期

关键词：

D O I：

10.1063/1.89739

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：454 / 456

页数：3

共 15 条

[1]

ALFEROV ZI, 1974, SOV PHYS SEMICOND+, V8, P358

[2] SELF-ABSORPTION EFFECTS ON RADIATIVE LIFETIME IN GAAS-GAALAS DOUBLE HETEROSTRUCTURES [J].

ASBECK, P .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) :820-822

[3] DERIVATIVE MEASUREMENTS OF CURRENT-VOLTAGE CHARACTERISTICS OF DOUBLE-HETEROSTRUCTURE INJECTION-LASERS [J].

BARNES, PA ;

PAOLI, TL .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1976, 12 (10) :633-639

[4] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J].

CASEY, HC ;

STERN, F .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) :631-643

[5] ELECTROLUMINESCENT SHIFTING-PEAK SPECTRA IN GAAS WITH UNIFORM EXCITATION [J].

CASEY, HC ;

BACHRACH, RZ .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) :2795-2804

[6] ORIGIN OF LARGE DARK SPOTS IN ALXGA1-XAS-GAAS HETEROSTRUCTURE PHOTOLUMINESCENCE [J].

HENRY, CH ;

LOGAN, RA .

APPLIED PHYSICS LETTERS, 1977, 31 (03) :203-205

[7]

HENRY CH, TO BE PUBLISHED

[8] ELASTICALLY ENHANCED NONRADIATIVE RECOMBINATION AT ALXGA1-XAS-GAAS HETERO-INTERFACE [J].

JOHNSTON, WD ;

LOGAN, RA .

APPLIED PHYSICS LETTERS, 1976, 28 (03) :140-142

[9] STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY [J].

LANG, DV ;

LOGAN, RA .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) :1053-1066

[10]

LANG DV, 1976, 13 P C PHYS SEM ROM

← 1 2 →