X-ray triple-crystal diffractometry and transmission electron microscopy characterization of defects in lattice-mismatched epitaxic structures

X-ray triple-crystal diffractometry has been applied to heterostructures with a misfit of lattice parameters in the interfaces. Si1-xGex/Si compositions as well as GaSb layers strongly mismatched to GaAs substrates have been studied. By use of various scans in both the Bragg and Laue geometries, the data are presented either as two-dimensional maps in the scattering plane or as the intensity distribution along the diffraction vector. The structural parameters of the layers were determined from a detailed analysis of the diffraction patterns. The X-ray diffractometry results are supported by a transmission electron microscopy study.