VERY-LOW-THRESHOLD INDEX-CONFINED PLANAR MICROCAVITY LASERS

被引：51
作者：
DEPPE, DG
HUFFAKER, DL
SHIN, J
DENG, Q
机构：
[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 09期
关键词：
D O I：
10.1109/68.414670
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A fabrication process for laterally index-confined planar microcavity lasers is given that results in continuous-wave thresholds as low as 59 mu A for a properly tuned cavity (T = 250 K). Characterization of the spontaneous emission mode shows that the lateral confinement, when reduced to the mode size expected for the planar cavity, appears to increase the spontaneous emission coupling to the lasing mode.
引用
收藏
页码：965 / 967
页数：3
相关论文
共 50 条
  • [21] Ultra-low threshold THz microcavity lasers with sub-wavelength mode volumes
    Chassapneux, Y.
    Palomo, J.
    Colombelli, R.
    Barbieri, S.
    Dhillon, S.
    Sirtori, C.
    Beere, H.
    Alton, J.
    Ritchie, D.
    [J]. 2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5, 2007, : 1053 - +
  • [22] Very small oxide-confined vertical microcavity lasers with high-contrast AlGaAs-AlxOy mirrors
    Shin, JH
    Han, IY
    Lee, YH
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (06) : 754 - 756
  • [23] Low Threshold Polariton Lasing from a Solution-Processed Organic Semiconductor in a Planar Microcavity
    Rajendran, Sai Kiran
    Wei, Mengjie
    Ohadi, Hamid
    Ruseckas, Arvydas
    Turnbull, Graham A.
    Samuel, Ifor D. W.
    [J]. ADVANCED OPTICAL MATERIALS, 2019, 7 (12)
  • [24] Wide temperature range linear DFB lasers with very low threshold current
    Chen, TR
    Chen, PC
    Ungar, J
    Paslaski, J
    Oh, S
    Luong, H
    BarChaim, N
    [J]. ELECTRONICS LETTERS, 1997, 33 (11) : 963 - 965
  • [25] Wide temperature range linear DFB lasers with very low threshold current
    Ortel Corporation, 2015 West Chestnut Street, Alhambra, CA 91803, United States
    [J]. Electron Lett, 11 (963-965):
  • [26] LOW THRESHOLD PLANAR BURIED HETEROSTRUCTURE LASERS FABRICATED BY IMPURITY-INDUCED DISORDERING
    THORNTON, RL
    BURNHAM, RD
    PAOLI, TL
    HOLONYAK, N
    DEPPE, DG
    [J]. APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1239 - 1241
  • [27] Planar photonic crystal nanolasers (II): Low-threshold quantum dot lasers
    Yoshie, T
    Shchekin, OB
    Chen, H
    Deppe, DG
    Scherer, A
    [J]. IEICE TRANSACTIONS ON ELECTRONICS, 2004, E87C (03): : 300 - 307
  • [28] ALGAAS TJS']JS LASERS WITH VERY LOW THRESHOLD CURRENT AND HIGH-EFFICIENCY
    HIRANO, R
    OOMURA, E
    IKEDA, K
    MATSUI, K
    ISHII, M
    SUSAKI, W
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 355 - 358
  • [29] VERY LOW-THRESHOLD 1.53-MUM DFB LASERS BY VPE TRANSPORT
    BROBERG, B
    NILSSON, S
    TANBUNEK, T
    [J]. ELECTRONICS LETTERS, 1987, 23 (12) : 624 - 625
  • [30] Low-threshold oxide-confined GaInNAs long wavelength vertical cavity lasers
    Larson, MC
    Coldren, CW
    Spruytte, SG
    Petersen, HE
    Harris, JS
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (12) : 1598 - 1600
12345