VERY-LOW-THRESHOLD INDEX-CONFINED PLANAR MICROCAVITY LASERS

被引：51

作者：

DEPPE, DG

HUFFAKER, DL

SHIN, J

DENG, Q

机构：

[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 09期

关键词：

D O I：

10.1109/68.414670

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fabrication process for laterally index-confined planar microcavity lasers is given that results in continuous-wave thresholds as low as 59 mu A for a properly tuned cavity (T = 250 K). Characterization of the spontaneous emission mode shows that the lateral confinement, when reduced to the mode size expected for the planar cavity, appears to increase the spontaneous emission coupling to the lasing mode.

引用

页码：965 / 967

页数：3

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