ACCEPTOR STABLE INSTABILITIES IN ZNSE UNDER HYDROSTATIC-PRESSURE

被引：6

作者：

STRACHAN, DJ

LI, MM

TAMARGO, MC

WEINSTEIN, BA

机构：

[1] SUNY BUFFALO,DEPT PHYS,239 FRONCZAK HALL,BUFFALO,NY 14260

[2] CUNY CITY COLL,DEPT CHEM,NEW YORK,NY 10031

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 138卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)90828-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Photoluminescence experiments on ZnSe doped with P and As have been conducted at high pressure and low temperature. We find evidence that deep states arising from these impurities become unstable between 15 and 25 kbar. Although our results are not yet definitive, some interesting implications for current models are discussed.

引用

页码：318 / 323

页数：6

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