THERMOELECTRIC POWER IN EPITAXIAL Ga1-xMnxAs FILMS

被引：0

作者：

Radchenko, M. V. ^{[1
]}

Lashkarev, G. V. ^{[1
]}

Sichkovskyy, V. I. ^{[1
]}

Osinniy, V. ^{[2
]}

Story, T. ^{[2
]}

Sadowski, J. ^{[2
,3
]}

机构：

[1] Nat Acad Sci Ukraine, Inst Problems Mat Sci, 3,Krzhyzhanivskogo Str, UA-03180 Kiev, Ukraine

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[3] Lund Univ, Maxlab, SE-22100 Lund, Sweden

来源：

UKRAINIAN JOURNAL OF PHYSICS | 2005年 / 50卷 / 12期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The thermoelectric power (TEP) in epitaxial Ga1-xMnxAs (x = 0.03/0.055) films 0.3 to 31 mu m in thickness grown by the low-temperature molecular-beam-epitaxy (LT-MBE) technology on semi-insulating GaAs (100) substrates has been measured in the temperature range 10-300 K. The current carriers (holes) in the films under investigation had the concentration of (1/4) x 10(20) cm(-3) and possessed the mobility of 1-10 cm(2) = (V x s). The analysis of the temperature dependences of TEP brought us to the conclusion about the presence of three contributions to the total TEP value, namely, the standard diffusion, ferromagnetic contribution, and exchange one. The model of a non-uniform distribution of magnetic phases has been considered for the film consisting of a paramagnetic phase and ferromagnetic clusters.

引用

页码：1351 / 1355

页数：5

共 13 条

[1] Ferromagnetism in III-V and II-VI semiconductor structures
Dietl, T
Ohno, H
[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2001, 9 (01) : 185 - 193
[2] Fedorych J. V., 2004, 33 INT SCH PHYS SEM, P70
[3] EFFECTS OF S-D INTERACTION ON TRANSPORT PHENOMENA
KASUYA, T
[J]. PROGRESS OF THEORETICAL PHYSICS, 1959, 22 (02): : 227 - 246
[4] Kondo J, 1970, SOLID STATE PHYS, V23, P183
[5] Lashkarev G. V., 1979, FIZ TEKH POLUPROV, V13, P1548
[6] THERMOELECTRIC FIGURE OF MERIT OF COMPOSITE SUPERLATTICE SYSTEMS
LINCHUNG, PJ
REINECKE, TL
[J]. PHYSICAL REVIEW B, 1995, 51 (19): : 13244 - 13248
[7] MOLECULAR-BEAM EPITAXIAL GAAS GROWN AT LOW-TEMPERATURES
LOOK, DC
[J]. THIN SOLID FILMS, 1993, 231 (1-2) : 61 - 73
[8] (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
Ohno, H
Shen, A
Matsukura, F
Oiwa, A
Endo, A
Katsumoto, S
Iye, Y
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (03) : 363 - 365
[9] Properties of ferromagnetic III-V semiconductors
Ohno, H
[J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1999, 200 (1-3) : 110 - 129
[10] Thermoelectric power in ferromagnetic Pb0.16Sn0.72Mn0.12Te semiconductor
Radchenko, MV
Lashkarev, GV
Osinniy, V
Witkowska, B
Domukhovski, V
Story, T
[J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2002, 247 (01) : 77 - 82

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