MICROPROBE RHEED STUDY OF ELECTROMIGRATION EFFECT ON SI MBE GROWTH

被引：7
|
作者：
ICHIKAWA, M
DOI, T
机构：
[1] Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo
来源：
APPLIED SURFACE SCIENCE | 1992年 / 60-1卷
关键词：
D O I：
10.1016/0169-4332(92)90394-D
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Si(001)2 x 1 domain conversion induced by a sample current and its effect on Si MBE growth are studied using microprobe reflection high-energy electron diffraction. Samples are heated by using both a direct current and a radiative heater. It is found that diffusion anisotropy of Si adatoms and the electric force acting on positively charged adatoms cause the domain conversion. Minor 2 x 1 domain terraces always spread by a long-range repulsive interaction between atomic steps when the sample is heated radiatively. The domain conversion phenomenon and the repulsive interaction cause biatomic step flow growth during MBE growth. Atom migration induced by the sample current promotes Si MBE growth.
引用
收藏
页码：45 / 54
页数：10
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