POSTDEPOSITION ANNEALING EFFECTS IN RF REACTIVE MAGNETRON SPUTTERED INDIUM TIN OXIDE THIN-FILMS

被引：26

作者：

MARTINEZ, MA

HERRERO, J

GUTIERREZ, MT

机构：

[1] Instituto de Energías Renovables (CIEMAT), 28040 Madrid

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1992年 / 26卷 / 04期

关键词：

D O I：

10.1016/0927-0248(92)90050-Y

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Indium tin oxide films have been grown by RF reactive magnetron sputtering. The influence of the deposition parameters on the properties of the films has been investigated and optimized, obtaining a value for the figure of merit of 6700 (OMEGA-cm)-1. As-grown indium tin oxide films were annealed in vacuum and O2 atmosphere. After these heat treatments the electro-optical properties were improved, with values for the resistivity of 1.9 X 10(-4)-OMEGA-cm and the figure of merit of 26700 (OMEGA-cm)-1.

引用

页码：309 / 321

页数：13

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