SIO2 THIN-FILM DEPOSITION BY EXCIMER LASER ABLATION FROM SIO TARGET IN OXYGEN ATMOSPHERE

被引：40

作者：

FOGARASSY, E

FUCHS, C

SLAOUI, A

STOQUERT, JP

机构：

[1] Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS n 292), 67037 Strasbourg Cedex, 23, rue du Loess

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 07期

关键词：

D O I：

10.1063/1.104253

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon dioxide thin films are deposited, for the first time, by reactive laser ablation from a silicon monoxide target in oxygen atmosphere, with a high-power pulsed ArF (λ=193 nm) excimer laser. The specific influence of oxygen in the chamber during the laser processing on the stoichiometry and final properties of the oxide films deposited at ambient temperature is demonstrated.

引用

页码：664 / 666

页数：3

共 14 条

[1] LASER-INDUCED FORMATION AND SURFACE PROCESSING OF HIGH-TEMPERATURE SUPERCONDUCTORS [J].

BAUERLE, D .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1989, 48 (06) :527-542

[2] GROWTH OF THIN-FILMS BY LASER-INDUCED EVAPORATION [J].

CHEUNG, JT ;

SANKUR, H .

CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1988, 15 (01) :63-109

[3] ALGORITHMS FOR THE RAPID SIMULATION OF RUTHERFORD BACKSCATTERING SPECTRA [J].

DOOLITTLE, LR .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 9 (03) :344-351

[4]

FOGARASSY E, 1987, PHILOS MAG B, V2, P253

[5]

FUCHS C, 1990, HIGH TEMPERATURE SUP, V169

[6] REACTIVE LASER-EVAPORATION FOR HYDROGENATED AMORPHOUS-SILICON [J].

HANABUSA, M ;

SUZUKI, M .

APPLIED PHYSICS LETTERS, 1981, 39 (05) :431-432

[7] LASER EVAPORATION AND CONDENSATION OF ER IN HYDROGEN AND INERT ATMOSPHERE [J].

OESTERREICHER, H ;

BITTNER, H ;

KOTHARI, B .

JOURNAL OF SOLID STATE CHEMISTRY, 1978, 26 (01) :97-99

[8]

PLISKIN WA, 1965, J ELECTROCHEM SOC, V112, P1015

[9] PLASMA LUMINESCENCE GENERATED IN LASER EVAPORATION OF DIELECTRICS [J].

SANKUR, H ;

NELSON, JG ;

PRITT, AT ;

GUNNING, WJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1987, 5 (01) :15-21

[10] FORMATION OF DIELECTRIC AND SEMICONDUCTOR THIN-FILMS BY LASER-ASSITED EVAPORATION [J].

SANKUR, H ;

CHEUNG, JT .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 47 (03) :271-284

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