DC MEASUREMENT OF SPACE CHARGE CAPACITANCE AND IMPURITY PROFILE BENEATH GATE OF AN MOST

被引：28

作者：

SHANNON, JM

机构：

来源：

SOLID-STATE ELECTRONICS | 1971年 / 14卷 / 11期

关键词：

D O I：

10.1016/0038-1101(71)90021-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1099 / &

共 10 条

[1]

ARNOLD E, 1969, JUN P INT C PROP US, P193

[2] OBSERVATION OF IMPURITY REDUSTRIBUTION DURING THERMAL OXIDATION OF SILICON USING MOS STRUCTURE [J].

DEAL, BE ;

GROVE, AS ;

SNOW, EH ;

SAH, CT .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) :308-&

[3] SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS [J].

GROVE, AS ;

FITZGERALD, DJ .

SOLID-STATE ELECTRONICS, 1966, 9 (08) :783-+

[4] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON [J].

GROVE, AS ;

SAH, CT ;

LEISTIKO, O .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) :2695-&

[5] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

GROVE, AS ;

DEAL, BE ;

SNOW, EH ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1965, 8 (02) :145-+

[6]

HILIBRAND J, 1960, RCA REV, V21, P245

[7] ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS BY DIFFERENTIAL CAPACITANCE TECHNIQUE [J].

KENNEDY, DP ;

OBRIEN, RR .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1969, 13 (02) :212-&

[8] SPACE CHARGE CALCUATIONS FOR SEMICONDUCTORS [J].

SEIWATZ, R ;

GREEN, M .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) :1034-1040

[9]

SHANNON JM, 1969, ELECTRONICS, V42, P96

[10]

VANGELDER W, 1971, J ELECTROCHEM SOC, P138

← 1 →