DC MEASUREMENT OF SPACE CHARGE CAPACITANCE AND IMPURITY PROFILE BENEATH GATE OF AN MOST

被引：28

作者：

SHANNON, JM

机构：

来源：

SOLID-STATE ELECTRONICS | 1971年 / 14卷 / 11期

关键词：

D O I：

10.1016/0038-1101(71)90021-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1099 / &

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共 10 条

[1] ARNOLD E, 1969, JUN P INT C PROP US, P193
[2] OBSERVATION OF IMPURITY REDUSTRIBUTION DURING THERMAL OXIDATION OF SILICON USING MOS STRUCTURE
DEAL, BE
GROVE, AS
SNOW, EH
SAH, CT
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) : 308 - &
[3] SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS
GROVE, AS
FITZGERALD, DJ
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (08) : 783 - +
[4] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON
GROVE, AS
SAH, CT
LEISTIKO, O
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) : 2695 - &
[5] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
DEAL, BE
SNOW, EH
SAH, CT
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +
[6] HILIBRAND J, 1960, RCA REV, V21, P245
[7] ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS BY DIFFERENTIAL CAPACITANCE TECHNIQUE
KENNEDY, DP
OBRIEN, RR
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1969, 13 (02) : 212 - &
[8] SPACE CHARGE CALCUATIONS FOR SEMICONDUCTORS
SEIWATZ, R
GREEN, M
[J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) : 1034 - 1040
[9] SHANNON JM, 1969, ELECTRONICS, V42, P96
[10] VANGELDER W, 1971, J ELECTROCHEM SOC, P138