A STUDY OF BASE BUILT-IN FIELD EFFECTS ON THE STEADY-STATE CURRENT GAIN OF HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：9

作者：

LIOU, JJ

WONG, WW

YUAN, JS

机构：

[1] Electrical Engineering Department, University of Central Florida, Orlando

来源：

SOLID-STATE ELECTRONICS | 1990年 / 33卷 / 07期

关键词：

D O I：

10.1016/0038-1101(90)90064-L

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper treats analytically the common-emitter d.c. current gain of heterojunction bipolar transistors with graded base for charge transport enhancement. Relevant device physics such as built-in electric field, current-induced base pushout, and drift velocity overshoot are accounted for in the model. Numerical simulations and measured dependencies published in the literature are included in support of the model. © 1990.

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页码：845 / 849

页数：5

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