DOUBLE PULSE MEASUREMENTS OF AVALANCHING P-N-JUNCTION SUBMICROSECOND TRANSIENT THERMAL RESPONSE

被引:1
作者
NIGRIN, J
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D O I
10.1063/1.1685607
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
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页码:264 / +
页数:1
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[1]   INPUT POWER INDUCED THERMAL EFFECTS RELATED TO TRANSITION TIME BETWEEN AVALANCHE AND SECOND BREAKDOWN IN P-N SILICON JUNCTIONS [J].
FERRY, DK ;
DOUGAL, AA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) :627-+
[2]   A METHOD FOR HEAT FLOW RESISTANCE MEASUREMENTS IN AVALANCHE DIODES [J].
HAITZ, RH ;
STOVER, HL ;
TOLAR, NJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (05) :438-&
[3]   MODEL FOR ELECTRICAL BEHAVIOR OF MICROPLASMA [J].
HAITZ, RH .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (05) :1370-&
[4]   TRANSIENT HEAT FLOW FROM AN EPITAXIAL LAYER INTO SUBSTRATE [J].
MOSEKILDE, E ;
LEBWOHL, PA ;
CARLSON, DG .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (06) :1030-+