EFFECT OF HOT-CARRIER INJECTION ON NMOSFET AND PMOSFET GATE OXIDE INTEGRITY

被引：19

作者：

ROSENBAUM, E

ROFAN, R

HU, CM

机构：

[1] Department of Electrical Engineering and Computer Science, University of California, Berkeley

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 11期

关键词：

D O I：

10.1109/55.119210

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

N- and pMOSFET's with 9-nm gate oxide are compared. Injected hot holes are found to be about 100 times as effective as electrons in precipitating oxide breakdown. PMOSFET's can tolerate 1000 times more charge injection than nMOSFET's, but not more drain current stress.

引用

页码：599 / 601

页数：3

共 6 条

[1]

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[2]

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[4]

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IEEE ELECTRON DEVICE LETTERS, 1991, 12 (03) :134-136

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