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IN SEARCH OF LOW-DISLOCATION-DENSITY HETERO-EPITAXIAL STRUCTURES
被引:12
作者
:
FITZGERALD, EA
论文数:
0
引用数:
0
h-index:
0
FITZGERALD, EA
机构
:
来源
:
JOM-JOURNAL OF THE MINERALS METALS & MATERIALS SOCIETY
|
1989年
/ 41卷
/ 04期
关键词
:
D O I
:
10.1007/BF03220193
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
引用
收藏
页码:20 / 24
页数:5
相关论文
共 41 条
[1]
INFLUENCE OF LATTICE MISFIT ON HETEROJUNCTION BIPOLAR-TRANSISTORS WITH LATTICE-MISMATCHED INGAAS BASES
ASHIZAWA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
ASHIZAWA, Y
AKBAR, S
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
AKBAR, S
SCHAFF, WJ
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
SCHAFF, WJ
EASTMAN, LF
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
EASTMAN, LF
FITZGERALD, EA
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
FITZGERALD, EA
AST, DG
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
AST, DG
[J].
JOURNAL OF APPLIED PHYSICS,
1988,
64
(08)
: 4065
-
4074
[2]
GROWTH OF INP ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
CRUMBAKER, TE
论文数:
0
引用数:
0
h-index:
0
机构:
COLORADO STATE UNIV,CTR OPTOELECTR COMP SYST,FT COLLINS,CO 80523
COLORADO STATE UNIV,CTR OPTOELECTR COMP SYST,FT COLLINS,CO 80523
CRUMBAKER, TE
LEE, HY
论文数:
0
引用数:
0
h-index:
0
机构:
COLORADO STATE UNIV,CTR OPTOELECTR COMP SYST,FT COLLINS,CO 80523
COLORADO STATE UNIV,CTR OPTOELECTR COMP SYST,FT COLLINS,CO 80523
LEE, HY
HAFICH, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
COLORADO STATE UNIV,CTR OPTOELECTR COMP SYST,FT COLLINS,CO 80523
COLORADO STATE UNIV,CTR OPTOELECTR COMP SYST,FT COLLINS,CO 80523
HAFICH, MJ
ROBINSON, GY
论文数:
0
引用数:
0
h-index:
0
机构:
COLORADO STATE UNIV,CTR OPTOELECTR COMP SYST,FT COLLINS,CO 80523
COLORADO STATE UNIV,CTR OPTOELECTR COMP SYST,FT COLLINS,CO 80523
ROBINSON, GY
[J].
APPLIED PHYSICS LETTERS,
1989,
54
(02)
: 140
-
142
[3]
RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW
DODSON, BW
论文数:
0
引用数:
0
h-index:
0
DODSON, BW
TSAO, JY
论文数:
0
引用数:
0
h-index:
0
TSAO, JY
[J].
APPLIED PHYSICS LETTERS,
1987,
51
(17)
: 1325
-
1327
[4]
WORK-HARDENING AND STRAIN RELAXATION IN STRAINED-LAYER BUFFERS
DODSON, BW
论文数:
0
引用数:
0
h-index:
0
DODSON, BW
[J].
APPLIED PHYSICS LETTERS,
1988,
53
(01)
: 37
-
38
[5]
CORRECTION
DODSON, BW
论文数:
0
引用数:
0
h-index:
0
DODSON, BW
[J].
APPLIED PHYSICS LETTERS,
1988,
52
(10)
: 852
-
852
[6]
NEW SOURCE OF DISLOCATIONS IN GEXSI1-X/SI(100) STRAINED EPITAXIAL LAYERS
EAGLESHAM, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LIVERPOOL,DEPT MAT SCI & ENGN,LIVERPOOL L69 3BX,ENGLAND
UNIV LIVERPOOL,DEPT MAT SCI & ENGN,LIVERPOOL L69 3BX,ENGLAND
EAGLESHAM, DJ
MAHER, DM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LIVERPOOL,DEPT MAT SCI & ENGN,LIVERPOOL L69 3BX,ENGLAND
UNIV LIVERPOOL,DEPT MAT SCI & ENGN,LIVERPOOL L69 3BX,ENGLAND
MAHER, DM
KVAM, EP
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LIVERPOOL,DEPT MAT SCI & ENGN,LIVERPOOL L69 3BX,ENGLAND
UNIV LIVERPOOL,DEPT MAT SCI & ENGN,LIVERPOOL L69 3BX,ENGLAND
KVAM, EP
BEAN, JC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LIVERPOOL,DEPT MAT SCI & ENGN,LIVERPOOL L69 3BX,ENGLAND
UNIV LIVERPOOL,DEPT MAT SCI & ENGN,LIVERPOOL L69 3BX,ENGLAND
BEAN, JC
HUMPHREYS, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LIVERPOOL,DEPT MAT SCI & ENGN,LIVERPOOL L69 3BX,ENGLAND
UNIV LIVERPOOL,DEPT MAT SCI & ENGN,LIVERPOOL L69 3BX,ENGLAND
HUMPHREYS, CJ
[J].
PHYSICAL REVIEW LETTERS,
1989,
62
(02)
: 187
-
190
[7]
STRUCTURE AND RECOMBINATION IN INGAAS/GAAS HETEROSTRUCTURES
FITZGERALD, EA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
FITZGERALD, EA
AST, DG
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
AST, DG
KIRCHNER, PD
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
KIRCHNER, PD
PETTIT, GD
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
PETTIT, GD
WOODALL, JM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
WOODALL, JM
[J].
JOURNAL OF APPLIED PHYSICS,
1988,
63
(03)
: 693
-
703
[8]
ELIMINATION OF INTERFACE DEFECTS IN MISMATCHED EPILAYERS BY A REDUCTION IN GROWTH AREA
FITZGERALD, EA
论文数:
0
引用数:
0
h-index:
0
FITZGERALD, EA
KIRCHNER, PD
论文数:
0
引用数:
0
h-index:
0
KIRCHNER, PD
PROANO, R
论文数:
0
引用数:
0
h-index:
0
PROANO, R
PETTIT, GD
论文数:
0
引用数:
0
h-index:
0
PETTIT, GD
WOODALL, JM
论文数:
0
引用数:
0
h-index:
0
WOODALL, JM
AST, DG
论文数:
0
引用数:
0
h-index:
0
AST, DG
[J].
APPLIED PHYSICS LETTERS,
1988,
52
(18)
: 1496
-
1498
[9]
FITZGERALD EA, 1989, 16TH PHYS CHEM SEM I
[10]
FITZGERALD EA, 1989, J APPL PHYS, V15
←
1
2
3
4
5
→
共 41 条
[1]
INFLUENCE OF LATTICE MISFIT ON HETEROJUNCTION BIPOLAR-TRANSISTORS WITH LATTICE-MISMATCHED INGAAS BASES
ASHIZAWA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
ASHIZAWA, Y
AKBAR, S
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
AKBAR, S
SCHAFF, WJ
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
SCHAFF, WJ
EASTMAN, LF
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
EASTMAN, LF
FITZGERALD, EA
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
FITZGERALD, EA
AST, DG
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
AST, DG
[J].
JOURNAL OF APPLIED PHYSICS,
1988,
64
(08)
: 4065
-
4074
[2]
GROWTH OF INP ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
CRUMBAKER, TE
论文数:
0
引用数:
0
h-index:
0
机构:
COLORADO STATE UNIV,CTR OPTOELECTR COMP SYST,FT COLLINS,CO 80523
COLORADO STATE UNIV,CTR OPTOELECTR COMP SYST,FT COLLINS,CO 80523
CRUMBAKER, TE
LEE, HY
论文数:
0
引用数:
0
h-index:
0
机构:
COLORADO STATE UNIV,CTR OPTOELECTR COMP SYST,FT COLLINS,CO 80523
COLORADO STATE UNIV,CTR OPTOELECTR COMP SYST,FT COLLINS,CO 80523
LEE, HY
HAFICH, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
COLORADO STATE UNIV,CTR OPTOELECTR COMP SYST,FT COLLINS,CO 80523
COLORADO STATE UNIV,CTR OPTOELECTR COMP SYST,FT COLLINS,CO 80523
HAFICH, MJ
ROBINSON, GY
论文数:
0
引用数:
0
h-index:
0
机构:
COLORADO STATE UNIV,CTR OPTOELECTR COMP SYST,FT COLLINS,CO 80523
COLORADO STATE UNIV,CTR OPTOELECTR COMP SYST,FT COLLINS,CO 80523
ROBINSON, GY
[J].
APPLIED PHYSICS LETTERS,
1989,
54
(02)
: 140
-
142
[3]
RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW
DODSON, BW
论文数:
0
引用数:
0
h-index:
0
DODSON, BW
TSAO, JY
论文数:
0
引用数:
0
h-index:
0
TSAO, JY
[J].
APPLIED PHYSICS LETTERS,
1987,
51
(17)
: 1325
-
1327
[4]
WORK-HARDENING AND STRAIN RELAXATION IN STRAINED-LAYER BUFFERS
DODSON, BW
论文数:
0
引用数:
0
h-index:
0
DODSON, BW
[J].
APPLIED PHYSICS LETTERS,
1988,
53
(01)
: 37
-
38
[5]
CORRECTION
DODSON, BW
论文数:
0
引用数:
0
h-index:
0
DODSON, BW
[J].
APPLIED PHYSICS LETTERS,
1988,
52
(10)
: 852
-
852
[6]
NEW SOURCE OF DISLOCATIONS IN GEXSI1-X/SI(100) STRAINED EPITAXIAL LAYERS
EAGLESHAM, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LIVERPOOL,DEPT MAT SCI & ENGN,LIVERPOOL L69 3BX,ENGLAND
UNIV LIVERPOOL,DEPT MAT SCI & ENGN,LIVERPOOL L69 3BX,ENGLAND
EAGLESHAM, DJ
MAHER, DM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LIVERPOOL,DEPT MAT SCI & ENGN,LIVERPOOL L69 3BX,ENGLAND
UNIV LIVERPOOL,DEPT MAT SCI & ENGN,LIVERPOOL L69 3BX,ENGLAND
MAHER, DM
KVAM, EP
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LIVERPOOL,DEPT MAT SCI & ENGN,LIVERPOOL L69 3BX,ENGLAND
UNIV LIVERPOOL,DEPT MAT SCI & ENGN,LIVERPOOL L69 3BX,ENGLAND
KVAM, EP
BEAN, JC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LIVERPOOL,DEPT MAT SCI & ENGN,LIVERPOOL L69 3BX,ENGLAND
UNIV LIVERPOOL,DEPT MAT SCI & ENGN,LIVERPOOL L69 3BX,ENGLAND
BEAN, JC
HUMPHREYS, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV LIVERPOOL,DEPT MAT SCI & ENGN,LIVERPOOL L69 3BX,ENGLAND
UNIV LIVERPOOL,DEPT MAT SCI & ENGN,LIVERPOOL L69 3BX,ENGLAND
HUMPHREYS, CJ
[J].
PHYSICAL REVIEW LETTERS,
1989,
62
(02)
: 187
-
190
[7]
STRUCTURE AND RECOMBINATION IN INGAAS/GAAS HETEROSTRUCTURES
FITZGERALD, EA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
FITZGERALD, EA
AST, DG
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
AST, DG
KIRCHNER, PD
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
KIRCHNER, PD
PETTIT, GD
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
PETTIT, GD
WOODALL, JM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
WOODALL, JM
[J].
JOURNAL OF APPLIED PHYSICS,
1988,
63
(03)
: 693
-
703
[8]
ELIMINATION OF INTERFACE DEFECTS IN MISMATCHED EPILAYERS BY A REDUCTION IN GROWTH AREA
FITZGERALD, EA
论文数:
0
引用数:
0
h-index:
0
FITZGERALD, EA
KIRCHNER, PD
论文数:
0
引用数:
0
h-index:
0
KIRCHNER, PD
PROANO, R
论文数:
0
引用数:
0
h-index:
0
PROANO, R
PETTIT, GD
论文数:
0
引用数:
0
h-index:
0
PETTIT, GD
WOODALL, JM
论文数:
0
引用数:
0
h-index:
0
WOODALL, JM
AST, DG
论文数:
0
引用数:
0
h-index:
0
AST, DG
[J].
APPLIED PHYSICS LETTERS,
1988,
52
(18)
: 1496
-
1498
[9]
FITZGERALD EA, 1989, 16TH PHYS CHEM SEM I
[10]
FITZGERALD EA, 1989, J APPL PHYS, V15
←
1
2
3
4
5
→