A DEVELOPMENTAL GERMANIUM N-P-N ALLOY-JUNCTION TRANSISTOR

被引：0

|

作者：

JENNY, DA

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1953年 / 41卷 / 03期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：412 / 412

页数：1

相关论文

共 50 条

[41] TRANSISTOR NONLINEARITY - DEPENDENCE ON EMITTER BIAS CURRENT IN P-N-P ALLOY JUNCTION TRANSISTORS
FEWER, DR
IRE TRANSACTIONS ON AUDIO, 1958, 6 (02): : 41 - 44
[42] Improvement of poly emitter n-p-n transistor matching in a 0.6 micron mixed signal technology
Lau, GKK
Einbrodt, W
Sieber, W
ICMTS 2003: PROCEEDINGS OF THE 2003 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 2003, : 232 - 237
[43] GERMANIUM P-N-JUNCTION-TUNNEL-JUNCTION COMBINATION DEVICES
LESK, IA
JENSEN, HA
SOLID-STATE ELECTRONICS, 1960, 1 (03) : 183 - &
[44] REDUCTION OF THE CURRENT GAIN OF THE N-P-N TRANSISTOR COMPONENT OF A THYRISTOR DUE TO THE DOPING CONCENTRATION OF THE P-BASE
ZEKRY, A
GERLACH, W
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (03) : 365 - 372
[45] Stochastic base doping and quantum-well enhancement of recombination in an n-p-n light-emitting transistor or transistor laser
Then, H. W.
Wu, C. H.
Feng, M.
Holonyak, N., Jr.
Walter, G.
APPLIED PHYSICS LETTERS, 2010, 96 (26)
[46] LOW-TEMPERATURE AVALANCHE MULTIPLICATION IN THE COLLECTOR BASE JUNCTION OF ADVANCED N-P-N TRANSISTORS
LU, PF
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) : 762 - 767
[47] Quick estimation of the resistivity of collector and the depth of the collector junction in the design of bipolar n-p-n transistors
Frolov, AN
Shutov, SV
TECHNICAL PHYSICS, 1998, 43 (08) : 1005 - 1006
[48] Quick estimation of the resistivity of collector and the depth of the collector junction in the design of bipolar n-p-n transistors
A. N. Frolov
S. V. Shutov
Technical Physics, 1998, 43 : 1005 - 1006
[49] Model for high-temperature radiation effects in n-p-n bipolar-junction transistors
Boch, J
Siagné, F
Mannoni, V
Giustino, F
Schrmipf, RD
Dusseau, L
Galloway, KF
Fesquet, J
Gasiot, J
Ecoffet, R
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2002, 49 (06) : 2990 - 2997
[50] HIGH-SPEED HIGH-VOLTAGE N-P-N CORE DRIVER TRANSISTOR FOR HYBRID TECHNOLOGY
GATES, HR
GOKHALE, BV
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (02) : 244 - &

← 1 2 3 4 5 →