DEEP DONOR LEVELS (DX CENTERS) IN III-V SEMICONDUCTORS

被引：695
作者：
MOONEY, PM [1 ]
机构：
[1] FRAUNHOFER INST APPL SOLID STATE PHYS,W-7800 FREIBURG,GERMANY
来源：
JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 03期
关键词：
D O I：
10.1063/1.345628
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：R1 / R26
页数：26
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