METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH FOR BURIED HETEROSTRUCTURE GAALAS LASERS WITH SEMIINSULATING BLOCKING LAYERS

被引：6

作者：

OKAYASU, M

KOZEN, A

HASUMI, Y

TEMMYO, J

UEHARA, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 24期

关键词：

D O I：

10.1063/1.98317

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1980 / 1982

页数：3

共 10 条

[1] THE USE OF GAAS-(GA, AL)AS HETEROSTRUCTURES FOR FET DEVICES [J].

BOCCONGIBOD, D ;

ANDRE, JP ;

BAUDET, P ;

HALLAIS, JP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1141-1147

[2] LOW THRESHOLD AND LOW DISPERSION MOCVD LPE BURIED-HETEROSTRUCTURE GAAS/GAALAS LASERS [J].

BRILLOUET, F ;

RIOU, J ;

TROTTE, M ;

AZOULAY, R ;

DUGRAND, L .

ELECTRONICS LETTERS, 1984, 20 (21) :857-859

[3] GAALAS BURIED-HETEROSTRUCTURE LASERS GROWN BY A 2-STEP MOCVD PROCESS [J].

HONG, CS ;

KASEMSET, D ;

KIM, ME ;

MILANO, RA .

ELECTRONICS LETTERS, 1983, 19 (19) :759-760

[4] SELECTIVE MOCVD GROWTH FOR APPLICATION TO GAAS/ALGAAS BURIED HETEROSTRUCTURE LASERS [J].

IWASAKI, T ;

MATSUO, N ;

MATSUMOTO, N ;

KASHIWA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01) :L66-L69

[5] SELECTIVE GROWTH OF ALXGA1-XAS EMBEDDED IN ETCHED GROOVES ON GAAS BY LOW-PRESSURE OMVPE [J].

KAMON, K ;

SHIMAZU, M ;

KIMURA, K ;

MIHARA, M ;

ISHII, M .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :297-302

[6] EFFECTS OF OXYGEN AND WATER-VAPOR INTRODUCTION DURING MOCVD GROWTH OF GAALAS [J].

TERAO, H ;

SUNAKAWA, H .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :157-162

[7] ULTRALOW THRESHOLD, GRADED-INDEX WAVEGUIDE, SEPARATE CONFINEMENT, CW BURIED-HETEROSTRUCTURE LASERS [J].

TSANG, WT ;

LOGAN, RA ;

DITZENBERGER, JA .

ELECTRONICS LETTERS, 1982, 18 (19) :845-847

[8] EXTREMELY LOW THRESHOLD (ALGA)AS GRADED-INDEX WAVEGUIDE SEPARATE CONFINEMENT HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

TSANG, WT .

APPLIED PHYSICS LETTERS, 1982, 40 (03) :217-219

[9] GAAS-ALXGA1-X AS BURIED-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY WITH AL0.65GA0.35AS (GE-DOPED) LIQUID-PHASE EPITAXY OVERGROWN LAYER FOR CURRENT INJECTION CONFINEMENT [J].

TSANG, WT ;

LOGAN, RA .

APPLIED PHYSICS LETTERS, 1980, 36 (09) :730-733

[10] GAAS-GA1-XALXAS BURIED-HETEROSTRUCTURE INJECTION LASERS [J].

TSUKADA, T .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) :4899-4906

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