Ultra-Low Power Successive Approximation Analog-to-Digital Converter Using Emerging Tunnel Field Effect Transistor Technology

This paper explores advantages of tunnel field effect transistor (TFET) analog-to-digital converters (ADCs) on energy efficiency and temperature stability. A fully-differential SAR ADC is designed using 20 nm TFET technology with doubled input swing and controlled comparator input common-mode voltage. Simulation results show that under V-DD of 0.1 V the ADC is able to achieve an energy of 0.1 pJ, which is one-to three-orders of magnitude lower than that of most fabricated CMOS ADCs. The temperature variation of ENOB and energy of the ADC ranging from -55 degrees C to 125 degrees C are 24% and 31.5%, respectively. Also, The SAR ADC has the maximum + 0.1/-0.2 LSB DNL and + 0.4/-0.3 LSB INL.