LIQUID EPITAXIAL GROWTH OF GAASSB AND ITS USE AS A HIGH-EFFICIENCY, LONG-WAVELENGTH THRESHOLD PHOTOEMITTER

被引:83
作者
ANTYPAS, GA
JAMES, LW
机构
关键词
D O I
10.1063/1.1659183
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2165 / &
相关论文
共 28 条
  • [11] Hilsum C., 1961, SEMICONDUCTING 3 5 C
  • [12] ILEGEMS M, 1969, 1968 P S GAAS, P3
  • [13] TRANSPORT PROPERTIES OF GAAS OBTAINED FROM PHOTOEMISSION MEASUREMENTS
    JAMES, LW
    MOLL, JL
    [J]. PHYSICAL REVIEW, 1969, 183 (03): : 740 - &
  • [14] JAMES LW, 1969, 2 P INT S GALL ARS 7, P230
  • [15] KOSTER W, 1955, Z METALLKD, V46, P291
  • [16] NELSON H, 1963, RCA REV, V24, P603
  • [17] GaAs-Cs: A NEW TYPE OF PHOTOEMITTER
    Scheer, J. J.
    van Laar, J.
    [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (08) : 189 - 193
  • [18] SIROTA NN, 1968, SEMICONDUCTORS SEMIM, V4
  • [19] STRINGFELLOW GB, 1969, B AM PHYS SOC, V14, P338
  • [20] ENERGY-GAP VARIATION IN MIXED 3-V ALLOYS
    THOMPSON, AG
    WOOLLEY, JC
    [J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (2P1) : 255 - &