LIQUID EPITAXIAL GROWTH OF GAASSB AND ITS USE AS A HIGH-EFFICIENCY, LONG-WAVELENGTH THRESHOLD PHOTOEMITTER

被引：83

作者：

ANTYPAS, GA

JAMES, LW

机构：

来源：

关键词：

D O I：

10.1063/1.1659183

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2165 / &

共 28 条

[1] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM
ARTHUR, JR
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) : 2257 - &
[2] PHOTOEMISSION FROM INP-CS-O
BELL, RL
UEBBING, JJ
[J]. APPLIED PHYSICS LETTERS, 1968, 12 (03) : 76 - &
[3] CLOUGH RB, 1969, T METALL SOC AIME, V245, P583
[4] DARKEN LS, 1967, T METALL SOC AIME, V239, P80
[5] DARKEN LS, 1967, T METALL SOC AIME, V239, P90
[6] DAY GF, 1967, AFALTR672 TECH REP
[7] THEORY OF ELECTRONIC STATES AND TRANSPORT IN GRADED MIXED SEMICONDUCTORS
GORA, T
WILLIAMS, F
[J]. PHYSICAL REVIEW, 1969, 177 (03): : 1179 - &
[8] Goryunova N. A., 1955, ZH TEKH FIZ, V25, P1339
[9] SOLUBILITY OF III-V COMPOUND SEMICONDUCTORS IN COLUMN-III LIQUIDS
HALL, RN
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 385 - 388
[10] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700