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- [1] POINT-DEFECT RESIDUAL DAMAGE CONSIDERATIONS FOLLOWING PREAMORPHIZATION OF SILICON .1. EXTENDED DEFECTS AND GATED DIODE LEAKAGEJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C453 - C453AJMERA, ACSALIH, ASMROZGONYI, GAFAIR, RBOZTURK, MCWORTMAN, JJ
- [3] POINT-DEFECT DOPANT DIFFUSION CONSIDERATIONS FOLLOWING PREAMORPHIZATION OF SILICON VIA SI+ AND GE+ IMPLANTATIONAPPLIED PHYSICS LETTERS, 1988, 52 (10) : 813 - 815AJMERA, ACROZGONYI, GAFAIR, RB
- [5] POINT-DEFECT DIFFUSION AND OXIDATION KINETICS .2.OXIDATION OF METALS, 1973, 6 (02): : 79 - 90MORIN, F
- [6] MODELING OF IMPURITY DIFFUSION IN SILICON DURING OXIDATION BASED ON POINT-DEFECT KINETICSJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : C324 - C324ANTONIADIS, DAMOSKOWITZ, I
- [7] MODELING OF DOPANT DIFFUSION IN SILICON - AN EFFECTIVE DIFFUSIVITY APPROACH INCLUDING POINT-DEFECT COUPLINGSJOURNAL OF APPLIED PHYSICS, 1991, 70 (06) : 3071 - 3080MATHIOT, DMARTIN, S
- [8] DETERMINATION OF SILICON POINT-DEFECT PARAMETERS AND REACTION BARRIER ENERGIES FROM GOLD DIFFUSION EXPERIMENTSJOURNAL OF APPLIED PHYSICS, 1995, 77 (03) : 1320 - 1322GHADERI, KHOBLER, GBUDIL, MMADER, LSCHULZE, HJ
- [9] POINT-DEFECT GENERATION DURING OXIDATION OF SILICON IN DRY OXYGEN .2. COMPARISON TO EXPERIMENTJOURNAL OF APPLIED PHYSICS, 1986, 59 (07) : 2551 - 2561DUNHAM, STPLUMMER, JD
- [10] POINT-DEFECT GENERATION DURING PHOSPHORUS DIFFUSION IN SILICON .2. CONCENTRATIONS BELOW SOLID SOLUBILITY, ION-IMPLANTED PHOSPHORUSJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (09) : 2348 - 2356TSAI, JCCSCHIMMEL, DGAHRENS, REFAIR, RB