CARRIER LIFETIMES IN SEMICONDUCTORS WITH 2 INTERACTING OR 2 INDEPENDENT RECOMBINATION LEVELS

被引:35
作者
CHOO, SC
机构
来源
PHYSICAL REVIEW B-SOLID STATE | 1970年 / 1卷 / 02期
关键词
D O I
10.1103/PhysRevB.1.687
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:687 / +
页数:1
相关论文
共 25 条
[11]  
KALASHNIKOV SG, 1960, FIZ TVERD TELA, V2, P2743
[12]   GENERATION-RECOMBINATION NOISE OF NI-DOPED GE IN TEMPERATURE RANGE 350 DEGREES -100 DEGREES K AND CAPTURE CROSS-SECTIONS OF NI IN GE [J].
KLAASSEN, FM ;
BOOY, HC ;
BLOK, J .
PHYSICA, 1961, 27 (01) :48-&
[13]   CARRIER LIFETIME IN INDIUM ANTIMONIDE [J].
LAFF, RA ;
FAN, HY .
PHYSICAL REVIEW, 1961, 121 (01) :53-&
[14]  
NORMURA KC, 1961, PHYS REV, V121, P734
[15]  
NORMURA KC, 1958, PHYS REV, V112, P1607
[16]   RECOMBINATION OF EXCESS CARRIERS IN SEMICONDUCTORS [J].
OKADA, JI .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1957, 12 (12) :1338-1344
[17]  
SAH CT, 1967, PR INST ELECTR ELECT, V55, P654
[18]  
SAH CT, 1967, PR INST ELECTR ELECT, V55, P672
[19]   ELECTRON-HOLE RECOMBINATION STATISTICS IN SEMICONDUCTORS THROUGH FLAWS WITH MANY CHARGE CONDITIONS [J].
SAH, CT ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1958, 109 (04) :1103-1115
[20]   CARRIER LIFETIME IN SEMICONDUCTORS FOR TRANSIENT CONDITIONS [J].
SANDIFORD, DJ .
PHYSICAL REVIEW, 1957, 105 (02) :524-524