INFLUENCE OF AN ELECTRIC-FIELD ON BEHAVIOR OF ZN AND TE IMPURITIES IN N-TYPE GALLIUM-ARSENIDE SINGLE-CRYSTALS

被引：0
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作者：
ORLOV, AM
PARKHOMENKO, VI
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1974年 / 8卷 / 06期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：783 / 784
页数：2
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