INFLUENCE OF AN ELECTRIC-FIELD ON BEHAVIOR OF ZN AND TE IMPURITIES IN N-TYPE GALLIUM-ARSENIDE SINGLE-CRYSTALS

被引：0

作者：

ORLOV, AM

PARKHOMENKO, VI

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1974年 / 8卷 / 06期

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D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：783 / 784

页数：2

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