UNEQUAL ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN GAAS

被引：66

作者：

STILLMAN, GE ^{[1
]}

WOLFE, CM ^{[1
]}

ROSSI, JA ^{[1
]}

FOYT, AG ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

APPLIED PHYSICS LETTERS | 1974年 / 24卷 / 10期

关键词：

D O I：

10.1063/1.1655016

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：471 / 474

页数：4

共 16 条

[1] THRESHOLD ENERGIES FOR ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN SEMICONDUCTORS [J].

ANDERSON, CL ;

CROWELL, CR .

PHYSICAL REVIEW B, 1972, 5 (06) :2267-&

[2] TEMPERATURE DEPENDENCE OF IONIZATION RATES IN GAAS [J].

CHANG, YJ ;

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (13) :5392-&

[3] ISOLATION OF JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT [J].

FOYT, AG ;

LINDLEY, WT ;

WOLFE, CM ;

DONNELLY, JP .

SOLID-STATE ELECTRONICS, 1969, 12 (04) :209-&

[4] IONIZATION RATE IN GAAS DETERMINED FROM PHOTOMULTIPLICATION IN A SCHOTTKY-BARRIER [J].

GLOVER, GH .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) :3253-3256

[5] AVALANCHE BREAKDOWN OF GALLIUM ARSENIDE P-N JUNCTIONS [J].

HALL, R ;

LECK, JH .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1968, 25 (06) :529-&

[6] EFFECTIVE IONIZATION RATE FOR HOT CARRIERS IN GAAS [J].

KRESSEL, H ;

KUPSKY, G .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1966, 20 (06) :535-&

[7]

LEE CC, PRIVATE COMMUNICATIO

[8] GAAS SCHOTTKY BARRIER AVALANCHE PHOTODIODES [J].

LINDLEY, WT ;

PHELAN, RJ ;

WOLFE, CM ;

FOYT, AG .

APPLIED PHYSICS LETTERS, 1969, 14 (06) :197-+

[9]

LOGAN RA, 1966, J PHYS SOC JPN, VS 21, P434

[10] AVALANCHE BREAKDOWN IN GALLIUM ARSENIDE PARA JUNCTIONS [J].

LOGAN, RA ;

CHYNOWETH, AG ;

COHEN, BG .

PHYSICAL REVIEW, 1962, 128 (06) :2518-&

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