SIMULTANEOUS ELIMINATION OF ELECTRICALLY ACTIVE DEFECTS IN SI/SIO2 STRUCTURES BY IMPLANTED FLUORINE

被引：4

作者：

AFANAS'EV, VV

DEPAS, M

DENIJS, JMM

BALK, P

机构：

[1] DIMES, Delft University of Technology

来源：

MICROELECTRONIC ENGINEERING | 1993年 / 22卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(93)90138-U

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of fluorine implantation on oxide and interface trapping centres in Si/SiO2 structures has been investigated using charge injection techniques. Significant reduction of the density of various defects has been observed for ultra-dry and wet oxides after F-implantation. The elimination of the traps takes place in a correlated manner despite the different nature of the centres. The catalytic action of fluorine via strain relaxation or release of defect passivating species is proposed to be the cause of the observed effect.

引用

页码：93 / 96

页数：4

共 9 条

[1]

Ma, Metal–oxide–semiconductor gate oxide reliability and the role of fluorine, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 10, (1992)

[2]

Sah, Sun, Tzou, Appl. Phys. Lett., 43, (1983)

[3]

Feigl, Young, DiMaria, Lai, Calise, J. Appl. Phys., 52, (1981)

[4]

Trombetta, Feigl, Zeto, J. Appl. Phys., 69, (1991)

[5]

Lai, Interface trap generation in silicon dioxide when electrons are captured by trapped holes, Journal of Applied Physics, 53, (1983)

[6]

Adamchuk, Akulov, Afanas'ev, Phys. Stat. Sol. (a), 122, (1990)

[7]

Stahlbush, Edwards, Griscom, Mrstik, J. Appl. Phys., 73, (1993)

[8]

Xie, Young, Electron injection studies on fluorine-implanted oxides, Journal of Applied Physics, 70, (1990)

[9]

Witham, Lenahan, Appl. Phys. Lett., 51, (1987)

← 1 →