LOW-NOISE MILLIMETRE-WAVE MIXER DIODES - RESULTS AND EVALUATION OF A TEST PROGRAM

被引：11
作者：
KEEN, NJ
机构：
来源：
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1980年 / 127卷 / 04期
关键词：
D O I：
10.1049/ip-i-1.1980.0039
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：188 / 198
页数：11
相关论文
共 56 条
[1]  
ABBOTT DA, 1977, I PHYS C SER 33A, P255
[2]   INFLUENCE OF LOW-TEMPERATURE THERMOTREATMENT ON CHARACTERISTICS OF CR-GAAS AND AU-CR-GAAS SCHOTTKY DIODES [J].
BORKOVSKAYA, OY ;
DMITRUK, NL ;
KONAKOVA, RV ;
FILATOV, MY .
ELECTRONICS LETTERS, 1978, 14 (22) :700-701
[3]  
BRODZINSKY A, 1978, NATO S MICROWAVE COM
[4]   PERFORMANCE AND RELIABILITY OF AN IMPROVED HIGH-TEMPERATURE GAAS SCHOTTKY JUNCTION AND NATIVE-OXIDE PASSIVATION [J].
CALVIELLO, JA ;
WALLACE, JL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (06) :698-704
[5]  
Campbell J. S., 1979, Fourth International Conference on Infrared and Millimeter Waves and their Applications, P80
[6]   STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].
CARD, HC ;
RHODERICK, EH .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+
[7]   SUB-HARMONICALLY PUMPED MILLIMETER-WAVE MIXERS [J].
CARLSON, ER ;
SCHNEIDER, MV ;
MCMASTER, TF .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1978, 26 (10) :706-715
[8]   IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J].
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1733-1735
[9]   PHYSICAL SIGNIFICANCE OF TO ANOMALIES IN SCHOTTKY BARRIERS [J].
CROWELL, CR .
SOLID-STATE ELECTRONICS, 1977, 20 (03) :171-175
[10]  
ERIKSON NR, 1979, THESIS U CALIFORNIA
123456