PHOTOELECTROCHEMICAL DEPTH PROFILING OF MOLECULAR-BEAM EPITAXY GROWN GROUP-III-V HETEROSTRUCTURES

被引：2

作者：

WEI, C

RAJESHWAR, K

ALAVI, K

PATHAK, RN

WANG, LT

机构：

[1] UNIV TEXAS,DEPT CHEM,ARLINGTON,TX 76019

[2] UNIV TEXAS,DEPT ELECT ENGN,ARLINGTON,TX 76019

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 11期

关键词：

D O I：

10.1063/1.107339

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A depth profiling technique is described for molecular beam epitaxy grown (Al,Ga)Al/GaAs heterostructures which combines photoelectrochemical layer-by-layer removal with analyses by photocurrent spectroscopy. The technique is illustrated for two types of samples having a graded and "flat" Al profile in the epilayer.

引用

页码：1348 / 1350

页数：3

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