PHOTOELECTROCHEMICAL DEPTH PROFILING OF MOLECULAR-BEAM EPITAXY GROWN GROUP-III-V HETEROSTRUCTURES

被引：2
作者：
WEI, C
RAJESHWAR, K
ALAVI, K
PATHAK, RN
WANG, LT
机构：
[1] UNIV TEXAS,DEPT CHEM,ARLINGTON,TX 76019
[2] UNIV TEXAS,DEPT ELECT ENGN,ARLINGTON,TX 76019
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 11期
关键词：
D O I：
10.1063/1.107339
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A depth profiling technique is described for molecular beam epitaxy grown (Al,Ga)Al/GaAs heterostructures which combines photoelectrochemical layer-by-layer removal with analyses by photocurrent spectroscopy. The technique is illustrated for two types of samples having a graded and "flat" Al profile in the epilayer.
引用
收藏
页码：1348 / 1350
页数：3
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