共 50 条
- [35] THE ROLE OF AS IN MOLECULAR-BEAM EPITAXY GAAS-LAYERS GROWN AT LOW-TEMPERATURE JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04): : 2323 - 2327
- [37] ARE LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY GAAS BUFFERS GOOD FOR MICROWAVE APPLICATIONS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 819 - 821
- [39] Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy Semiconductors, 1999, 33 : 824 - 829
- [40] On the hopping and band conductivity in molecular-beam epitaxial low-temperature grown GaAs PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1998, 205 (01): : 125 - 128