INSITU OBSERVATION OF ELECTROMIGRATION IN CU FILM USING SCANNING MU-REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION MICROSCOPE

被引：8

作者：

MASU, K ^{[1
]}

HIURA, Y ^{[1
]}

TSUBOUCHI, K ^{[1
]}

OHMI, T ^{[1
]}

MIKOSHIBA, N ^{[1
]}

机构：

[1] TOHOKU UNIV,FAC ENGN,DEPT ELECTR,SENDAI,MIYAGI 980,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12B期

关键词：

INTERCONNECTION; VLSI; ELECTROMIGRATION; POLYCRYSTAL; CU; RHEED; INSITU OBSERVATION; NONDESTRUCTIVE OBSERVATION;

D O I：

10.1143/JJAP.30.3642

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed void and hillock formation at the grain boundary and inside the grain in the Cu line due to electromigration (EM), by means of in situ nondestructive imaging of micrograins using a scanning mu-reflection high-energy electron diffraction (mu-RHEED) microscope. Accelerated electromigration testing was performed at a dc current density of 5 x 10(6) A/cm2 and at 250-degrees-C in the scanning mu-RHEED microscope. The triple point of grain boundaries was confirmed to weaken the EM endurance. Furthermore, we conjectured that high EM endurance inside the grain could be achieved with the current flow along the [011] direction for fcc metal such as Cu.

引用

页码：3642 / 3645

页数：4