THE INFLUENCE OF THE COMPOSITION OF THE LAYERS AND OF THE INORGANIC SOLVENTS ON PHOTOINDUCED DISSOLUTION OF AS-S AMORPHOUS THIN-FILMS

Dissolution of AsxS100-x (x = 28; 40; 42; 45) thin layers in alkaline solutions was studied. The dissolution rate of as-evaporated and exposed layers increases with temperature, pH of solution and with presence of oxidizing agents in solvent. It decreases with As content in the layer and in presence of reducing agents in etching solution. It is lower in as-evaporated layers. The differences in solubility rates are related with different content of As-As bonds or As4S4 structural units in the layers.