PREPARATION OF SIC FILMS BY PHOTOCHEMICAL VAPOR-DEPOSITION USING A D2 LAMP

被引：0

作者：

MOTOJIMA, S

MANO, S

机构：

来源：

JOURNAL DE PHYSIQUE IV | 1991年 / 1卷 / C2期

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暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

SiC films have been prepared by photochemical vapour deposition using a D2 lamp from a gas mixture of CH3SiCl3+H2+Ar on a graphite plate. The deposition temperature of the SiC films of a single phase was lowered by irradiation with a D2 lamp by 50-degrees-C as compared to that without irradiation. Furthermore, the deposition rate was increased with irradiation by 1.2-2.8 times as compared to that without irradiation.

引用

页码：365 / 371

页数：7

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