PREPARATION OF SIC FILMS BY PHOTOCHEMICAL VAPOR-DEPOSITION USING A D2 LAMP

被引：0
|
作者：
MOTOJIMA, S
MANO, S
机构：
来源：
JOURNAL DE PHYSIQUE IV | 1991年 / 1卷 / C2期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
SiC films have been prepared by photochemical vapour deposition using a D2 lamp from a gas mixture of CH3SiCl3+H2+Ar on a graphite plate. The deposition temperature of the SiC films of a single phase was lowered by irradiation with a D2 lamp by 50-degrees-C as compared to that without irradiation. Furthermore, the deposition rate was increased with irradiation by 1.2-2.8 times as compared to that without irradiation.
引用
收藏
页码：365 / 371
页数：7
相关论文
共 50 条
12345