MISFIT DISLOCATION ENERGY IN EPITAXIAL OVERGROWTHS OF FINITE THICKNESS

被引:29
|
作者
VANDERMERWE, JH
VANDERBE.NG
机构
关键词
D O I
10.1016/0039-6028(72)90117-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:1 / +
页数:1
相关论文
共 50 条
  • [21] A CRITERION FOR ARREST OF A THREADING DISLOCATION IN A STRAINED EPITAXIAL LAYER DUE TO AN INTERFACE MISFIT DISLOCATION IN ITS PATH
    FREUND, LB
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (05) : 2073 - 2080
  • [22] Misfit characters effect on the dislocation structure and nucleation mechanism in FCC epitaxial crystals
    School of Material Science and Engineering, Nanchang University, Nanchang 330047, China
    Rengong Jingti Xuebao, 2006, 1 (74-80):
  • [23] THE ENERGY OF SYSTEMS OF MISFIT DISLOCATIONS IN EPITAXIAL STRAINED LAYERS
    ATKINSON, A
    JAIN, SC
    THIN SOLID FILMS, 1992, 222 (1-2) : 161 - 165
  • [24] Critical thickness for misfit dislocation formation in InAs/GaAs(110) heteroepitaxy
    Plans, I.
    Carpio, A.
    Bonilla, L. L.
    Caflisch, R. E.
    PROGRESS IN INDUSTRIAL MATHEMATICS AT ECMI 2006, 2008, 12 : 381 - +
  • [25] Oriented films of epitaxial MFI overgrowths
    Wang, Zheng
    Hedlund, Jonas
    Zhang, Hong
    Zou, Xiaodong
    MICROPOROUS AND MESOPOROUS MATERIALS, 2006, 95 (1-3) : 86 - 91
  • [26] Influence of interfacial oxygen and carbon on the misfit dislocation generation in SiGe epitaxial layers
    Fukuda, M.
    Shimamune, Y.
    Tanahashi, K.
    Ikeda, K.
    Nishikawa, M.
    Maekawa, H.
    Tamura, N.
    Mori, T.
    Shimizu, A.
    Kase, M.
    ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 5: NEW MATERIALS, PROCESSES, AND EQUIPMENT, 2009, 19 (01): : 213 - 221
  • [27] THE BARRIER TO MISFIT DISLOCATION GLIDE IN CONTINUOUS, STRAINED, EPITAXIAL LAYERS ON PATTERNED SUBSTRATES
    WATSON, GP
    AST, DG
    ANDERSON, TJ
    PATHANGEY, B
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (05) : 3103 - 3110
  • [28] Energetics of misfit dislocation dipoles in anisotropic epitaxial films with nanoscale compositional modulation
    Choi, S. T.
    Earmme, Y. Y.
    INTERNATIONAL JOURNAL OF SOLIDS AND STRUCTURES, 2006, 43 (20) : 6294 - 6308
  • [29] EFFECT OF COMPRESSIVE AND TENSILE STRAIN ON MISFIT DISLOCATION INJECTION IN SIGE EPITAXIAL LAYERS
    WEGSCHEIDER, W
    CERVA, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03): : 1056 - 1063
  • [30] Misfit dislocation generation in SiGe epitaxial layers supersaturated with intrinsic point defects
    Vdovin, V. I.
    Zakharov, N. D.
    THIN SOLID FILMS, 2008, 517 (01) : 278 - 280