NATURE OF THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT-DENSITY OF LONG-WAVELENGTH INASSBP/INAS AND INASSBP/INASSB DOUBLE-HETEROSTRUCTURE LASERS

The threshold currents of InAsSbP/InAs and InAsSbP/InAsSb double-heterostructure lasers were investigated theoretically and experimentally at temperatures 4.2-150 K. Theoretical calculations were made using the exact values of the overlap integrals, occurring in the expression for the rate of the Auger recombination process involving the spin-orbit splitt-off band (CHHS process), and allowing for the nonparabolicity of the carrier spectrum at high values of the wave vector. Interband radiative recombination occurred in the temperature range 4.2-80 K, whereas the dominant process at higher temperatures was CHHS and it governed not only the quantum efficiency but the upper limit of the working temperatures of the lasers.