SEGREGATION BEHAVIOR FOR CO-CU MULTILAYERS

被引:20
|
作者
CHEN, Q [1 ]
ONELLION, M [1 ]
WALL, A [1 ]
机构
[1] IBM CORP,DIV STORAGE SYST PROD,ROCHESTER,MN 55901
关键词
D O I
10.1016/0040-6090(91)90178-Z
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The segregation behavior of Co-Cu multilayers has been studied using 1-5 monolayers of cobalt and copper on a Cu(111) substrate. Substrate and overlayer-multilayer orders were confirmed using reflection high energy electron diffraction. Segregation and interdiffusion behavior were observed using Auger electron spectroscopy. The results indicate that well-ordered Co/Cu heterostructures can be grown epitaxially on Cu(111); the growth mode is predominantly layer by layer. Cobalt on Cu(111) exhibits an interdiffusion temperature of 250-275-degrees-C, while Cu/Co/Cu(111) bilayers and heterostructures exhibit an interdiffusion temperature of 500-550-degrees-C. The consequences of this segregation behavior for fabricating magnetic multilayers will be discussed.
引用
收藏
页码:103 / 110
页数:8
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