SEGREGATION BEHAVIOR FOR CO-CU MULTILAYERS

被引：20

作者：

CHEN, Q ^{[1
]}

ONELLION, M ^{[1
]}

WALL, A ^{[1
]}

机构：

[1] IBM CORP,DIV STORAGE SYST PROD,ROCHESTER,MN 55901

来源：

THIN SOLID FILMS | 1991年 / 196卷 / 01期

关键词：

D O I：

10.1016/0040-6090(91)90178-Z

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The segregation behavior of Co-Cu multilayers has been studied using 1-5 monolayers of cobalt and copper on a Cu(111) substrate. Substrate and overlayer-multilayer orders were confirmed using reflection high energy electron diffraction. Segregation and interdiffusion behavior were observed using Auger electron spectroscopy. The results indicate that well-ordered Co/Cu heterostructures can be grown epitaxially on Cu(111); the growth mode is predominantly layer by layer. Cobalt on Cu(111) exhibits an interdiffusion temperature of 250-275-degrees-C, while Cu/Co/Cu(111) bilayers and heterostructures exhibit an interdiffusion temperature of 500-550-degrees-C. The consequences of this segregation behavior for fabricating magnetic multilayers will be discussed.

引用

页码：103 / 110

页数：8

共 29 条

[1] EXPLORING MAGNETIC-PROPERTIES OF ULTRATHIN EPITAXIAL MAGNETIC-STRUCTURES USING MAGNETO-OPTICAL TECHNIQUES [J].