SMECTIC-LAYER GROWTH AT SOLID INTERFACES

被引：115

作者：

OCKO, BM

机构：

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 64卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.64.2160

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

X-ray reflectivity is used to study the temperature-dependent smectic layering of the cyanobiphenyl compounds (nCB) in the isotropic phase at alkylsilane-coated silicon surfaces. Layer-by-layer growth is observed for 11CB and 12CB. Comparison of the layering transition temperatures with measurements at the vapor interface is used to determine the relative anchoring strengths at the two interfaces. © 1990 The American Physical Society.

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页码：2160 / 2163

页数：4

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