INSITU INVESTIGATION OF INAS METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWTH USING REFLECTANCE ANISOTROPY

被引：21

作者：

KOCH, SM ^{[1
]}

ACHER, O ^{[1
]}

OMNES, F ^{[1
]}

DEFOUR, M ^{[1
]}

RAZEGHI, M ^{[1
]}

DREVILON, B ^{[1
]}

机构：

[1] ECOLE POLYTECH,LPICM,F-91128 PALAISEAU,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 07期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.346365

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using reflectance anisotropy, we have investigated InAs metalorganic chemical vapor deposition under optimal growth conditions. The measured optical anisotropy of the growing surface is significantly different from that of the nongrowing, AsH3-stabilized surface. This difference δ becomes more pronounced at low V/III gas flow ratios and low temperatures. The value of δ also depends on the light energy, reaching a maximum in the range of 2.30-2.38 eV. In addition, we show that it is possible to monitor effects of the reactor on the growth, namely transient flow perturbations on the growing surface due to the switching of gas flows.

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页码：3364 / 3369

页数：6

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