共 50 条
- [4] HIGH-PERFORMANCE ALINAS-GAINAS HEMTS AND HBTS INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 605 - 612
- [5] VERTICAL SCALING OF ULTRA-HIGH-SPEED ALINAS-GAINAS HEMTS 1989 INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 1989, : 105 - 108
- [7] EFFECT OF N-CHANNEL AND P-CHANNEL DOPING ON THE IV CHARACTERISTICS OF ALINAS-GAINAS HEMTS INSTITUTE OF PHYSICS CONFERENCE SERIES, 1992, (120): : 287 - 292
- [8] NOVEL HIGH-PERFORMANCE SELF-ALIGNED 0.15 MICRON LONG T-GATE ALINAS-GAINAS HEMTS 1989 INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 1989, : 101 - 104
- [9] Influence of surface layers on the RF-performance of AlInAs-GaInAs HFET's IEEE Microwave and Guided Wave Letters, 1992, 2 (12): : 472 - 474
- [10] THE IMPACT OF EPITAXIAL LAYER DESIGN AND QUALITY ON GAINAS/ALINAS HIGH-ELECTRON-MOBILITY TRANSISTOR PERFORMANCE JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 678 - 681