NEW DIFFUSION-TYPE STRIPE-GEOMETRY INJECTION-LASER

被引：35
作者：
MARSCHALL, P
SCHLOSSER, E
WOLK, C
机构：
[1] AEG-Telefunken, Forschungsinstitut Ulm, D-7900 Ulm, West Germany
来源：
ELECTRONICS LETTERS | 1979年 / 15卷 / 01期
关键词：
Semiconductor junction lasers;
D O I：
10.1049/el:19790028
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The device structure, fabrication process and properties of a new diffusion-type stripe-geometry injection laser are described. A V-groove etched into the laser surface determines the shape of the diffusion front and defines the stripe width. This V-groove laser operates stably in the fundamental transverse mode and exhibits linear kink-free light/current characteristics up to 25 mW per mirror. © 1979, The Institution of Electrical Engineers. All rights reserved.
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页码：38 / 39
页数：2
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