RAMAN-SCATTERING STUDY OF LATTICE DISORDER IN 1-MEV SI-IMPLANTED GAAS

被引：29

作者：

BRAUNSTEIN, G ^{[1
]}

TUSCHEL, D ^{[1
]}

CHEN, S ^{[1
]}

LEE, ST ^{[1
]}

机构：

[1] EASTMAN KODAK CO,DIV ANALYT TECHNOL,ROCHESTER,NY 14650

来源：

关键词：

D O I：

10.1063/1.344108

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3515 / 3522

页数：8

共 18 条

[1] Beserman R., 1976, Acta Electronica, V19, P67
[2] A MONTE-CARLO COMPUTER-PROGRAM FOR THE TRANSPORT OF ENERGETIC IONS IN AMORPHOUS TARGETS
BIERSACK, JP
HAGGMARK, LG
[J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 174 (1-2): : 257 - 269
[3] BRAUNSTEIN G, IN PRESS MATER RES S
[4] PHONON SHIFTS IN ION BOMBARDED GAAS - RAMAN MEASUREMENTS
BURNS, G
DACOL, FH
WIE, CR
BURSTEIN, E
CARDONA, M
[J]. SOLID STATE COMMUNICATIONS, 1987, 62 (07) : 449 - 454
[5] CHEN S, 1989, MAT RES S C, V138, P233
[6] CHEUNG NW, 1985, SPIE P, V530, P3
[7] OBSERVATION OF TWO-DIMENSIONAL ORDERING IN ION-DAMAGED GRAPHITE DURING POST-IMPLANTATION ANNEALING
ELMAN, BS
BRAUNSTEIN, G
DRESSELHAUS, MS
DRESSELHAUS, G
VENKATENSAN, T
GIBSON, JM
[J]. PHYSICAL REVIEW B, 1984, 29 (08): : 4703 - 4708
[8] Feldman L.C., 1982, MAT ANAL ION CHANNEL, P117
[9] FELDMAN LC, 1982, MATERIALS ANAL ION C, P235
[10] Giles M. D., 1988, VLSI TECHNOLOGY, P327