A HIGH DENSITY FORM OF AMORPHOUS GE

[1] EFFECT OF DEPOSITION PARAMETERS ON CRYSTALLINITY OF EVAPORATED GERMANIUM FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4301 - &

[2] SOLID AMORPHOUS GE AND AS AS EXAMPLES OF LATTICE-LIKE AMORPHOUS SUBSTANCES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04): : 628 - +

[3] ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J]. PHYSICAL REVIEW LETTERS, 1969, 23 (11) : 581 - &

[4] SPECIFIC HEAT AND HEAT OF CRYSTALLIZATION OF AMORPHOUS GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) : 4214 - &

[5] CHEN HS, 1967, THESIS HARVARD U

[6] CHOPRA KL, TO BE PUBLISHED

[7] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[8] DAVEY JE, TO BE PUBLISHED

[9] EVIDENCE FOR A SHARP ABSORPTION EDGE IN AMORPHOUS GE [J]. PHYSICAL REVIEW LETTERS, 1969, 22 (20) : 1058 - &

[10] DONOVAN TM, TO BE PUBLISHED

[1] EFFECT OF DEPOSITION PARAMETERS ON CRYSTALLINITY OF EVAPORATED GERMANIUM FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4301 - &

[2] SOLID AMORPHOUS GE AND AS AS EXAMPLES OF LATTICE-LIKE AMORPHOUS SUBSTANCES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04): : 628 - +

[3] ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J]. PHYSICAL REVIEW LETTERS, 1969, 23 (11) : 581 - &

[4] SPECIFIC HEAT AND HEAT OF CRYSTALLIZATION OF AMORPHOUS GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) : 4214 - &

[5] CHEN HS, 1967, THESIS HARVARD U

[6] CHOPRA KL, TO BE PUBLISHED

[7] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[8] DAVEY JE, TO BE PUBLISHED

[9] EVIDENCE FOR A SHARP ABSORPTION EDGE IN AMORPHOUS GE [J]. PHYSICAL REVIEW LETTERS, 1969, 22 (20) : 1058 - &

[10] DONOVAN TM, TO BE PUBLISHED